Datasheet4U Logo Datasheet4U.com

BU4S11 - Single 2-input NAND gate

Features

  • 1) Low current dissipation. 2) Super-mini mold package designed for surface mounting. 3) Wide range of operating power supply voltage. 4) Capable of driving two L-TTL inputs and one LS-TTL input directly.
  • Block diagram VDD 5 Y 4 1 A 2 B 3 VSS.
  • Absolute maximum ratings (Ta = 25°C) Parameter Power supply voltage Power dissipation Input current Operating temperature Storage temperature Input voltage Symbol VDD Pd IIN Topr Tstg VIN Limits VSS.
  • 0.3 ~ VSS + 18.

📥 Download Datasheet

Datasheet preview – BU4S11

Datasheet Details

Part number BU4S11
Manufacturer ROHM
File Size 39.33 KB
Description Single 2-input NAND gate
Datasheet download datasheet BU4S11 Datasheet
Additional preview pages of the BU4S11 datasheet.
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
Standard ICs Single 2-input NAND gate BU4S11 The BU4S11 is a dual-input positive logic NAND gate. This is an ultra-compact logic IC with one circuit of the BU4011B built into an SMP package. Features • 1) Low current dissipation. 2) Super-mini mold package designed for surface mounting. 3) Wide range of operating power supply voltage. 4) Capable of driving two L-TTL inputs and one LS-TTL input directly •Block diagram VDD 5 Y 4 1 A 2 B 3 VSS •Absolute maximum ratings (Ta = 25°C) Parameter Power supply voltage Power dissipation Input current Operating temperature Storage temperature Input voltage Symbol VDD Pd IIN Topr Tstg VIN Limits VSS – 0.3 ~ VSS + 18 170 ± 10 – 40 ~ + 85 – 55 ~ + 150 VSS – 0.3 ~ VDD + 0.
Published: |