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BU4S11G2 - Single 2-Input NAND Gate

General Description

The BU4S11G2 is a 2-input NAND gate.

An inverter-based buffer is incorporated at the gate output to improve I/O transmission characteristics, and it minimizes a variation in the propagation delay time caused by an increase in the load capacitance.

Supply Voltage Range:

Key Features

  • Low power consumption.
  • High noise immunity.
  • Wide operating supply voltage range.
  • High input impedance.
  • High fan out.
  • Input can be directly driven 2 L-TTL inputs or 1 LS-TTL.
  • Buffered output Packages SSOP5 W(Typ) x D(Typ) x H(Max) 2.90mm x 2.80mm x 1.25mm Pin Configurations (Top View) VDD 5 Y 4 123 A B VSS SSOP5 Pin.

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Datasheet Details

Part number BU4S11G2
Manufacturer ROHM
File Size 739.62 KB
Description Single 2-Input NAND Gate
Datasheet download datasheet BU4S11G2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet General Purpose CMOS Logic IC Single 2-Input NAND Gate BU4S11G2 General Description The BU4S11G2 is a 2-input NAND gate. An inverter-based buffer is incorporated at the gate output to improve I/O transmission characteristics, and it minimizes a variation in the propagation delay time caused by an increase in the load capacitance. Key Specifications  Supply Voltage Range:  Input Voltage Range:  Operating Temperature Range: +3V to +16V 0V to VDD -40°C to +85°C Features  Low power consumption  High noise immunity  Wide operating supply voltage range  High input impedance  High fan out  Input can be directly driven 2 L-TTL inputs or 1 LS-TTL  Buffered output Packages SSOP5 W(Typ) x D(Typ) x H(Max) 2.90mm x 2.80mm x 1.