MH2101WZ
MH2101WZ is Fast Recovery Diode manufactured by ROHM.
650V 30A Fast Recovery Diode
VRM IF (Nominal) VF (Typ.)
Max. Possible Chips per Wafer
650V 30A 1.45V 1612pcs l Features 1) Light Punch Through Type
2) Low Forward Voltage
3) Very Fast & Soft Recovery
4) Low Recovery Loss l Application Free Wheeling l Outline
Wafer l Inner Circuit
(1)
(2)
(1) Anode (2) Cathode l Absolute Maximum Ratings Parameter
Repetitive Peak Reverse Voltage, Tj = 25°C Forward Current Pulsed Forward Current Operating Junction Temperature
- 1 Depending on thermal properties of assembly
- 2 Pulse width limited by Tjmax.
Symbol
VRM IF- 1 IFP- 2 Tj
Value 650
- 1)
120 -40 to +175
Unit V A A °C l Electrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Unit
Breakdown Voltage
BV IR = 10μA
- -V
Reverse Current
IR VR = 650V
Forward Voltage
IF = 30A, VF- 3 Tj = 25°C
Tj = 175°C
- 3 Design assurance without measurement
- - 10 μA
- 1.45 1.9 V
- 1.55
- .rohm. © 2019 ROHM Co., Ltd. All rights...
