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Rohm Semiconductor Electronic Components Datasheet

R6547ENZ4 Datasheet

Power MOSFET

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R6547ENZ4
  Nch 650V 47A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
650V
0.080Ω
±47A
480W
lFeatures
1) Low on-resistance
2) Fast switching
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
lOutline
TO-247G
 
 
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Tube
Packing code
C13
Marking
R6547ENZ4
Quantity (pcs)
600
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
650
V
±47
A
±141
A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS
9.3
A
Avalanche energy, single pulse
EAS*3
1222
mJ
Power dissipation (Tc = 25°C)
PD
480
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20200108 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

R6547ENZ4 Datasheet

Power MOSFET

No Preview Available !

R6547ENZ4
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
 
                  
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
- 0.26 /W
-
- 30 /W
-
- 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
650 -
-
V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
VDS = 650V, VGS = 0V
 
 
 
IDSS Tj = 25°C
-
- 100 μA
Tj = 125°C
-
- 1000
IGSS VGS = ±20V, VDS = 0V
-
- ±100 nA
VGS(th) VDS = VGS, ID = 1.72mA 2
-
4
V
VGS = 10V, ID = 25.8A
 
 
 
RDS(on)*5 Tj = 25°C
- 0.070 0.080 Ω
Tj = 125°C
- 0.140 -
RG f = 1MHz, open drain
-
1
-
Ω
                                                                                         
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20200108 - Rev.002


Part Number R6547ENZ4
Description Power MOSFET
Maker ROHM
PDF Download

R6547ENZ4 Datasheet PDF






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