1)Low switching loss 2)High current overload capacity
zConstruction Silicon epitaxial planer type
ROHM : LPDS JEITA : TO263S
Manufacture Date
zTaping Dimensions(Unit : mm)
Data Sheet
AEC-Q101 Qualified
zLand Size Figure(Unit : mm)
LPDS zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average rectified foward current
Io
Forward current surge peak
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Conditions.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Super Fast Recovery Diode
RFN20NS3SFH
zSerise Standard Fast Recovery
zDimensions(Unit : mm)
zApplications General rectification
RFN20 NS3S
zFeatures 1)Low switching loss 2)High current overload capacity
zConstruction Silicon epitaxial planer type
ROHM : LPDS JEITA : TO263S
Manufacture Date
zTaping Dimensions(Unit : mm)
Data Sheet
AEC-Q101 Qualified
zLand Size Figure(Unit : mm)
LPDS zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average rectified foward current
Io
Forward current surge peak
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Conditions Duty0.