* 1) Low Collector - Emitter Saturation Voltage 2) Short Circuit Withstand Time 8μs 3) Qualified to AEC-Q101 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant (2)
* 1 (1) (3) lPackaging Specifications Packaging (1) Gate (2) Collector (3) Emitter
* 1 Built in
RGS00TS65EHR Datasheet (905.30 KB)
RGS00TS65EHR
905.30 KB
Field stop trench igbt.
RGS00TS65EHR 650V 50A Field Stop Trench IGBT Datasheet VCES IC (100°C) VCE(sat) (Typ.) PD 650V 50A 1.65V 326W lOutline TO-247N lInner Circuit (1.
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