RGS00TS65HR Description
1/9 2019.02 - Rev.A RGS00TS65HR lThermal Resistance Parameter IGBT Junction - Case Datasheet Symbol Rθ(j-c) Values Min. - - 0.46 Unit C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - Collector Cut - off Current VCE = 650V, VGE = 0V, ICES Tj = 25℃ Tj = 175℃ 2 - - Gate - Emitter Leakage Current IGES VGE =...
RGS00TS65HR Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant