RGS80TSX2D Description
1/11 2020.09 - Rev.C RGS80TSX2D lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Unit Min. - - 0.27 C/W - - 0.56 C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. 2/11 2020.09 - Rev.C RGS80TSX2D Datasheet lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min.
RGS80TSX2D Key Features
- Emitter Saturation Voltage 2) Short Circuit Withstand Time 10μs 3) Built in Very Fast & Soft Recovery FRD 4) Pb
- free Lead Plating ; RoHS pliant
- 1 Built in FRD
- 450 C11