RGS00TS65EHR Overview
1/11 2019.03 - Rev.A RGS00TS65EHR lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Min. - - 0.46 - - 0.80 Unit C/W C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - Collector Cut - off Current Gate - Emitter Leakage Current VCE = 650V, VGE=...
RGS00TS65EHR Key Features
- Emitter Saturation Voltage 2) Short Circuit Withstand Time 8μs 3) Qualified to AEC-Q101 4) Built in Very Fast & Soft Rec
- free Lead Plating ; RoHS pliant