4N60 Datasheet 4a 600v N-channel Enhancement Mode Power MOSFET

Manufacturer: ROUM

Overview: 4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number	4N60
Manufacturer	ROUM
File Size	1.28 MB
Description	4A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	4N60-ROUM.pdf

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

VDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A 2

Key Features

Fast Switching.
ESD Improved Capability.
Low ON Resistance(Rdson≤2.5Ω).
Low Gate Charge(Typical Data:14.5nC).
Low Reverse Transfer Capacitances(Typical:4pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test TO-220C TO-220F TO-262 3.

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