F10N60 Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
F10N60 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.9Ω)
- Low Gate Charge(Typical Data:32nC)
- Low Reverse Transfer Capacitances(Typical:7.5pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
F10N60 Applications
- Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency