F10N60 mosfet equivalent, 10a 600v n-channel enhancement mode power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤0.9Ω)
* Low Gate Charge(Typical Data:32nC)
* Low Reverse Transfer Capacitances(Typical:7.5pF)
* 100% Single.
* Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency.
* Power Switch Circu.
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
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