F10N60 Datasheet | Specifications & PDF Download

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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Silan Microelectronics SVF10N60CF/T/FJD_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60CF/T is an N-channel enhancement mode power

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MHF10N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capa

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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MDF10N60B N-channel MOSFET 600V MDF10N60B N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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Silan Microelectronics SVF10N60CF/T/FJD_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60CF/T is an N-channel enhancement mode power

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isc N-Channel MOSFET Transistor AOTF10N60 FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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FQP10N60-FQPF10N60 600V,10A N-Channel MOSFET General Description Product Summary The FQP10N60 & FQPF10N60 are fabricated using an advanced high vol

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PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Sw

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MDF10N60G N-channel MOSFET 600V MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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SLP10N60C / SLF10N60C SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast

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