F10N60 Datasheet | Specifications & PDF Download

TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

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MDF10N60G N-channel MOSFET 600V MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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MSF10N60 600V N-Channel MOSFET Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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FQP10N60-FQPF10N60 600V,10A N-Channel MOSFET General Description Product Summary The FQP10N60 & FQPF10N60 are fabricated using an advanced high vol

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET Descriptio

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MDF10N60B N-channel MOSFET 600V MDF10N60B N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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HIGH VOLTAGE N-Channel MOSFET      WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP10N60 SDF10N60 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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STF10N60DM2 N-channel 600 V, 0.440 Ω typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data 3 2 1 TO-220FP Figure 1: I

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDF10N60GTH ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy

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10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate

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AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated

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AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced hi

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MHF10N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capa

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