F10N60 Datasheet | Specifications & PDF Download

TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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MDF10N60G N-channel MOSFET 600V MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced hi

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HIGH VOLTAGE N-Channel MOSFET      WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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FGPF10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT FGPF10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Cu

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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Silan Microelectronics SVF10N60CF/T/FJD_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60CF/T is an N-channel enhancement mode power

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FQP10N60-FQPF10N60 600V,10A N-Channel MOSFET General Description Product Summary The FQP10N60 & FQPF10N60 are fabricated using an advanced high vol

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast

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FDPF10N60ZUT — N-Channel UniFETTM Ultra FRFETTM MOSFET FDPF10N60ZUT N-Channel UniFETTM Ultra FRFETTM MOSFET 600 V, 9 A, 800 mΩ December 2013 Featur

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (

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Features � 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate Charge(34nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capab

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TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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