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FM25L512 - 3V F-RAM Memory

General Description

The FM25L512 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM.

Key Features

  • 512K bit Ferroelectric Nonvolatile RAM.
  • Organized as 65,536 x 8 bits.
  • Unlimited Read/Write Cycles.
  • 10 Year Data Retention.
  • NoDelay™ Writes.
  • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI.
  • Up to 20 MHz Frequency.
  • Direct Hardware Replacement for EEPROM.
  • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme.
  • Hardware Protection.
  • Software Protection Low Power.

📥 Download Datasheet

Datasheet Details

Part number FM25L512
Manufacturer Ramtron
File Size 231.75 KB
Description 3V F-RAM Memory
Datasheet download datasheet FM25L512 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Frequency • Direct Hardware Replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • Low Voltage Operation 3.0V – 3.