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2N7002K - N-Channel Enhancement Mode Power MOSFET

Description

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Features

  • VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package.

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Datasheet Details

Part number 2N7002K
Manufacturer Rectron
File Size 222.79 KB
Description N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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2N7002K N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. Battery operated systems Solid-state relays P/N suffix V means AEC-Q101 qualified, e.
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