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Renesas Electronics Components Datasheet

2SC4807 Datasheet

Silicon NPN Epitaxial Type Transistor

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2SC4807
Silicon NPN Epitaxial
REJ03G0731-0300
(Previous ADE-208-1122A)
Rev.3.00
Aug.10.2005
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 4.4 GHz Typ
High output power
1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
Note: Marking is “ER”.
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
Collector power dissipation
IC
PC*1
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm)
Ratings
20
15
2
200
800
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.3.00 Aug 10, 2005 page 1 of 7


Renesas Electronics Components Datasheet

2SC4807 Datasheet

Silicon NPN Epitaxial Type Transistor

No Preview Available !

2SC4807
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)CBO
20
30
V IC = 10 µA, IE = 0
ICBO — — 1 µA VCB = 15 V, IE = 0
ICEO
——
1 mA VCE = 15 V, RBE =
IEBO — — 10 µA VEB = 2 V, IC = 0
hFE 50 120 250
VCE = 5 V, IC = 100 mA
Cob — 2.8 4.0 pF VCB = 5 V, IE = 0, f = 1 MHz
fT
3.0 4.4
— GHz VCE = 5 V, IC = 100 mA
PG 5.0 7.0 — dB VCE = 5 V, IC = 100 mA,
f = 900 MHz
NF — 2.5 4.0 dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 7


Part Number 2SC4807
Description Silicon NPN Epitaxial Type Transistor
Maker Renesas
Total Page 8 Pages
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