Preliminary Data Sheet
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
Sep 14, 2012
<R> ORDERING INFORMATION
25 pcs (Non reel)
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Total Power Dissipation
−65 to +150
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Sep 14, 2012
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