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Renesas Electronics Components Datasheet

2SC5337 Datasheet

NPN SILICON RF TRANSISTOR

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Preliminary Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
<R> ORDERING INFORMATION
Part Number
2SC5337
2SC5337-T1
Order Number
2SC5337-AZ
2SC5337-T1-AZ
Package
4-pin power
minimold
(Pb-Free) Note
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
30
15
3.0
250
2.0
150
65 to +150
Unit
V
V
V
mA
W
°C
°C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/


Renesas Electronics Components Datasheet

2SC5337 Datasheet

NPN SILICON RF TRANSISTOR

No Preview Available !

2SC5337
<R> ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 20 V, IE = 0
Emitter Cut-off Current
DC Current Gain
IEBO VBE = 2 V, IC = 0
hFE Note 1 VCE = 10 V, IC = 50 mA
RF Characteristics
Insertion Power Gain
S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz
Noise Figure (1)
NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz
Noise Figure (2)
NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz
2nd Order Intermoduration Distortion IM2 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBμV/75 Ω, f1 = 190 MHz,
f2 = 90 MHz, f = f1 f2
3rd Order Intermoduration Distortion
IM3 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBμV/75 Ω, f1 = 190 MHz,
f2 = 200 MHz, f = 2 × f1 f2
MIN.
60
7.0
TYP. MAX.
0.01 5.0
0.03 5.0
120 200
8.3 –
1.5 3.5
2.0 3.5
59.0 –
82.0 –
Unit
μA
μA
dB
dB
dB
dB
dB
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. RS = RL = 50 Ω, tuned
<R> hFE CLASSIFICATION
Rank
Marking
hFE Value
QR/YQR
QR
60 to 120
QS/YQS
QS
100 to 200
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 2 of 5
Free Datasheet http://www.datasheet4u.com/


Part Number 2SC5337
Description NPN SILICON RF TRANSISTOR
Maker Renesas
Total Page 7 Pages
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