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2SC5337 - NPN SILICON RF TRANSISTOR

Description

Rev.

First edition issued Second edition issued Second V1 edition issued The company name is changed to Renesas Electronics Corporation.

Features

  • Low distortion: IM2 = 59.0 dB TYP. , IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA.
  • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz.
  • 4-pin power minimold package with improved gain from the 2SC4536 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012.

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Datasheet Details

Part number 2SC5337
Manufacturer Renesas
File Size 113.90 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet 2SC5337 Datasheet
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Full PDF Text Transcription

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Preliminary Data Sheet 2SC5337 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 ORDERING INFORMATION Part Number 2SC5337 2SC5337-T1 Order Number 2SC5337-AZ 2SC5337-T1-AZ Package 4-pin power minimold (Pb-Free) Note Quantity 25 pcs (Non reel) 1 kpcs/reel Supplying Form • Magazine case • 12 mm wide embossed taping • Collector face the perforation side of the tape Note Contains Lead in the part except the electrode terminals.
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