2SK2736 Description
2SK2736 Silicon N Channel MOS FET High Speed Power Switching.
2SK2736 Key Features
- Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A)
- 4 V gate drive devices
- High speed switching
- Part: 2SK2736
- Manufacturer: Renesas
- Size: 81.43 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SK2736 | Silicon N-Channel MOSFET |