2SK2736 Silicon N Channel DV–L MOS FET High Spee.
Hitachi Semiconductor
2SK2736 - Silicon N-Channel MOSFET
2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = .
Renesas
2SK2736 - Silicon N-Channel MOSFET
2SK2736 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate driv.
