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2SK3419 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS (on) = 4.3 mΩ typ.
  • 4 V gate drive device.
  • High speed switching Outline.

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Datasheet Details

Part number 2SK3419
Manufacturer Renesas
File Size 112.35 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK3419 Datasheet

Full PDF Text Transcription for 2SK3419 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3419. For precise diagrams, and layout, please refer to the original PDF.

2SK3419 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RE...

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4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1099-0200 (Previous: ADE-208-942) Rev.2.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.2.00 Sep 07, 2005 page 1 of 7 2SK3419 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.

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