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Renesas Electronics Components Datasheet

FX20ASJ-2 Datasheet

Pch Power MOS FET

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FX20ASJ-2
High-Speed Switching Use
Pch Power MOS FET
Features
Drive voltage : 4 V
VDSS : – 100 V
rDS(ON) (max) : 0.26
ID : – 20 A
Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
12 3
1
3
2, 4
REJ03G1441-0300
Rev.3.00
Dec 19, 2008
1. Gate
2. Drain
3. Source
4. Drain
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Ratings
–100
±20
–20
–80
–20
–20
–80
35
– 55 to +150
– 55 to +150
0.32
Unit
V
V
A
A
A
A
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 50 µH
Typical value
REJ03G1441-0300 Rev.3.00 Dec 19, 2008
Page 1 of 6


Renesas Electronics Components Datasheet

FX20ASJ-2 Datasheet

Pch Power MOS FET

No Preview Available !

FX20ASJ-2
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min
–100
–1.3
Typ
–1.8
0.20
0.25
–2.0
10.3
2360
198
99
13
30
139
74
–1.0
100
Max
±0.1
–0.1
–2.3
0.26
0.32
–2.6
–1.5
3.57
Unit
V
µA
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test Conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –100 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V
ID = –10 A, VGS = – 4 V
ID = –10 A, VGS = –10 V
ID = –10 A, VDS = –10 V
VDS = –10 V, VGS = 0 V,
f = 1MHz
VDD = –50 V, ID = –10 A,
VGS = –10 V,
RGEN = RGS = 50
IS = –10 A, VGS = 0 V
Channel to case
IS = –20 A, dis/dt = 100 A/µs
REJ03G1441-0300 Rev.3.00 Dec 19, 2008
Page 2 of 6


Part Number FX20ASJ-2
Description Pch Power MOS FET
Maker Renesas
Total Page 7 Pages
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