FX20ASJ-2 High-Speed Switching Use Pch Power MOS F.
Renesas
FX20ASJ-2 - Pch Power MOS FET
FX20ASJ-2 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integra.
Mitsubishi Electric Semiconductor
FX20ASJ-03 - P-Channel MOSFET
P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M.
Mitsubishi Electric Semiconductor
FX20ASJ-06 - P-Channel MOSFET
P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER M.
Mitsubishi Electric Semiconductor
FX20ASJ-2 - P-Channel MOSFET
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX20ASJ-2 MITSUBISHI Pch POWER MOSFET FX20ASJ-2 HIGH-SPEED .
Renesas
FX20ASJ-03F - P-channel Power MOS FET
FX20ASJ-03F High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Outline .
