Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS (on) =2.4 mΩ typ.
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
REJ03G1119-0500 (Previous: ADE-208-1490C)
Rev.5.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.5.00 Sep 07, 2005 page 1 of...