Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS (on) = 3.8 mΩ typ.
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C- FM)
REJ03G1123-0300 (Previous: ADE-208-1570A)
Rev.3.00 Sep 07, 2005
1. Gate 2. Drain 3. Source
Rev.3.00 Sep 07, 2005 page 1 of...
