Key Features
- Low on-resistance
- RDS(on) = 3.8 mΩ typ.
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source Outline
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
H7N0308CF
|
Renesas |
Silicon N-Channel MOSFET |
|
H7N0308AB
|
Renesas |
Silicon N-Channel MOSFET |
|
H7N0308LS
|
Renesas |
Silicon N-Channel MOSFET |
|
H7N0308LD
|
Renesas |
Silicon N-Channel MOSFET |
|
H7N0308LM
|
Renesas |
Silicon N-Channel MOSFET |
|
H7N0307LD
|
Renesas |
Silicon N-Channel MOSFET |
|
H7N0307LS
|
Renesas |
Silicon N-Channel MOSFET |
|
H7N0307LD
|
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
H7N0307AB
|
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
H7N0307LM
|
Renesas |
Silicon N-Channel MOSFET |