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H7N0308CF - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance.
  • RDS(on) = 3.8 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline TO-220CFM ADE-208-1570A(Z) 2nd. Edition Aug. 2002 D G S 123 1. Gate 2. Drain 3. Source H7N0308CF Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch No.

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H7N0308CF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220CFM ADE-208-1570A(Z) 2nd. Edition Aug. 2002 D G S 123 1. Gate 2. Drain 3. Source H7N0308CF Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch Note 2 Channel to Case Thermal Impedance θch-c Channel to Ambient Thermal Impedance θch-a Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 60 240 60 30 4.17 62.