HAF2017 - Silicon N-Channel Power MOS FET

Renesas

Datasheet Details

Part number	HAF2017
Manufacturer	Renesas
File Size	121.57 KB
Description	Silicon N-Channel Power MOS FET
Datasheet	HAF2017-Renesas.pdf

This FET has the over temperature shutdown capability sensing the junction temperature.

Logic level operation (4 to 6 V Gate drive).
High endurance capability against to the short circuit.
Built-in the over temperature shutdown circuit.
Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratin.

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Published: May 1, 2016 |