HAF2017L Datasheet Silicon N-channel Power Mos Fet

Manufacturer: Renesas

Overview: HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	HAF2017L
Manufacturer	Renesas
File Size	121.57 KB
Description	Silicon N-Channel Power MOS FET
Datasheet	HAF2017L HAF2017 Datasheet (PDF)

s This FET has the over temperature shutdown capability sensing the junction temperature.

This FET has the built-in over temperature shutdown circuit in the gate area.

And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Logic level operation (4 to 6 V Gate drive).
High endurance capability against to the short circuit.
Built-in the over temperature shutdown circuit.
Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratin.

Part Number	Description
HAF2017	Silicon N-Channel Power MOS FET
HAF2017S	Silicon N-Channel Power MOS FET
HAF2015RJ	N-Channel MOSFET
HAF2021L	Silicon N-Channel MOSFET
HAF2021S	Silicon N-Channel MOSFET
HAF2027L	Silicon N-Channel Power MOSFET Power Switching
HAF2027S	Silicon N-Channel Power MOSFET Power Switching
HAF1008	P-Channel MOSFET
HAF1008L	P-Channel MOSFET
HAF1008S	P-Channel MOSFET