HAF2017S - Silicon N-Channel Power MOS FET

This page provides the datasheet information for the HAF2017S, a member of the HAF2017 Silicon N-Channel Power MOS FET family.

Product Overview

Renesas

Part number	HAF2017S
Manufacturer	Renesas
File Size	121.57 KB
Description	Silicon N-Channel Power MOS FET
Datasheet	HAF2017S Datasheet
Additional preview pages of the HAF2017S datasheet.

This FET has the over temperature shutdown capability sensing the junction temperature.

This FET has the built-in over temperature shutdown circuit in the gate area.

Logic level operation (4 to 6 V Gate drive).
High endurance capability against to the short circuit.
Built-in the over temperature shutdown circuit.
Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratin.

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Published: May 1, 2016 |