Renesas Electronics HAF2017
Silicon N-Channel Power MOS FET
| Part No. | HAF2017 |
|---|---|
| Datasheet | HAF2017 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOS FET |
| Buy | Stock & Price |
FEATURES
● Logic level operation (4 to 6 V Gate drive)● High endurance capability against to the short circuit
● Built-in the over temperature shutdown circuit
● Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S)
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. Value at Tch = 25°C Symbol VDSS VGSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Rating 60 16 –2.5 20 40 20 50 150 –55 to +150 (Ta = 25°C) Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Input voltage Input current (Gate non shut down) Input current (Gat...
