Part number:
K3511
Manufacturer:
File Size:
142.49 KB
Description:
Mos field effect transistor.
* Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low Ciss: Ciss = 5900 pF TYP.
* Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to
K3511
142.49 KB
Mos field effect transistor.
📁 Related Datasheet
K3510 N-Channel Power MOSFET (Renesas)
K3511 MOS Field Effect Transistor (Kexin)
K3515-01MR 2SK3515-01MR (Fuji Electric)
K3518 2SK3518 (Fuji Semiconductors)
K3519PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (KEC)
K350 Silicon N-Channel MOSFET (Hitachi)
K3500G Clock Oscillator (MTRONPTI)
K3502-01MR 2SK3502-01MR (Fuji Electric)
K3503FC450 Medium Voltage Thyristor (IXYS)
K3503FC460 Medium Voltage Thyristor (IXYS)
