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Renesas Electronics Components Datasheet

M3016204 Datasheet

Serial MRAM Memory

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High Performance
M1004204/M1008204/M1016204
Serial MRAM Memory M3004204/M3008204/M3016204
Description
Mxxxx204 is a magneto-resistive random-access memory
(MRAM). It is offered in density ranging from 4Mbit to 16Mbit.
MRAM technology is analogous to Flash technology with SRAM
compatible read/write timings (Persistent SRAM, P-SRAM). Data is
always non-volatile with 1016 write cycles endurance and greater
than 20-year retention @85°C.
MRAM is a true random-access memory; allowing both reads and
writes to occur randomly in memory. MRAM is ideal for applications
that must store and retrieve data without incurring large latency
penalties. It offers low latency, low power, infinite endurance and
scalable non-volatile memory technology.
Mxxxx204 is available in small footprint 8-pad DFN (WSON) and 8-
pin SOIC packages. These packages are compatible with similar
low-power volatile and non-volatile products.
Mxxxx204 is offered with industrial (-40°C to 85°C) and industrial
plus (-40°C to 105°C) operating temperature ranges.
Typical Applications
Ideal for applications that must store and retrieve data
without incurring large latency penalties.
Factory Automation
Multifunction Printers
Industrial Control And Monitoring
Medical Diagnostics
Data Switches And Routers
Block Diagram
Features
Interface
Serial Peripheral Interface QSPI (4-4-4)
Single Data Rate Mode: 108MHz
Double Data Rate Mode: 54MHz
Technology
40nm pMTJ STT-MRAM
Data Endurance: 1016 write cycles
Data Retention: 20 years @ 85°C
Density
4Mb, 8Mb, 16Mb
Operating Voltage Range
VCC: 1.71V – 2.00V
VCC: 2.70V – 3.60V
Operating Temperature Range
Industrial: -40°C to 85°C
Industrial Plus: -40°C to 105°C
Packages
8-pad DFN (WSON) (5.0mm x 6.0mm)
8-pin SOIC (5.2mm x 5.2mm)
Data Protection
Hardware Based: Write Protect Pin (WP#)
Software Based: Address Range Selectable through
Configuration bits (Top/Bottom, Block Protect[2:0])
Identification
64-bit Unique ID
64-bit User Programmable Serial Number
Augmented Storage Array
256-byte User Programmable with Write Protection
Supports JEDEC Reset
RoHS Compliant
CS#
SO / IO[1]
Serial
I/Os
WP# / IO[2]
VSS
Command
&
Control
Regulator
Address Register
Status Register
Command Register
High Voltage
Generator
Column
Decoder
MAMAMRrARrrRAarrAaryMAayMyM
Data Buffer
VCC
IO[3]
CLK
SI / IO[0]
Apr.16.20
Page 1


Renesas Electronics Components Datasheet

M3016204 Datasheet

Serial MRAM Memory

No Preview Available !

M1004204/M1008204/M1016204 M3004204/M3008204/M3016204
Contents
1. Performance ............................................................................................................................................................................................3
2. General Description...............................................................................................................................................................................3
3. Ordering Options ....................................................................................................................................................................................4
3.1 Valid Combinations — Standard .........................................................................................................................................................4
4. Signal Description and Assignment..................................................................................................................................................7
5. Package Options ....................................................................................................................................................................................9
5.1 8-Pad DFN (WSON) (Top View)..........................................................................................................................................................9
5.2 8-Pin SOIC (Top View) ........................................................................................................................................................................9
6. Package Drawings ...............................................................................................................................................................................10
6.1 8-Pad DFN (WSON) ..........................................................................................................................................................................10
6.2 8-Pin SOIC ........................................................................................................................................................................................11
7. Architecture ............................................................................................................................................................................................12
8. Device Initialization ..............................................................................................................................................................................14
9. Memory Map ..........................................................................................................................................................................................16
10. Augmented Storage Array Map .......................................................................................................................................................16
11. Register Addresses .............................................................................................................................................................................16
12. Register Map..........................................................................................................................................................................................17
12.1 Status Register / Device Protection Register (Read/Write) ...............................................................................................................17
12.2 Augmented Storage Array Protection Register (Read/Write) ............................................................................................................18
12.3 Device Identification Register (Read Only)........................................................................................................................................19
12.4 Serial Number Register (Read/Write) ................................................................................................................................................19
12.5 Unique Identification Register (Read Only) .......................................................................................................................................19
12.6 Configuration Register 1 (Read/Write)...............................................................................................................................................20
12.7 Configuration Register 2 (Read/Write)...............................................................................................................................................21
12.8 Configuration Register 3 (Read/Write)...............................................................................................................................................23
12.9 Configuration Register 4 (Read/Write)...............................................................................................................................................23
13. Instruction Set........................................................................................................................................................................................24
14. Instruction Description and Structures...........................................................................................................................................27
15. Electrical Specifications......................................................................................................................................................................38
15.1 CS# Operation & Timing....................................................................................................................................................................41
15.2 Data Output Operation & Timing .......................................................................................................................................................43
15.3 WP# Operation & Timing...................................................................................................................................................................44
Enter Deep Power Down Command (EDP – B9h) ............................................................................................................................45
Exit Deep Power Down Command (EXDPD - ABh) ..........................................................................................................................46
Enter Hibernate Command (EHBN – BAh)........................................................................................................................................47
16. Revision History..........................................................................................................................................................................................48
Apr.16.20
Page 2


Part Number M3016204
Description Serial MRAM Memory
Maker Renesas
Total Page 3 Pages
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