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M5M29GB320WG Datasheet CMOS Block Erase Flash Memory

Manufacturer: Renesas

Download the M5M29GB320WG datasheet PDF. This datasheet also includes the M5M29GT320WG variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M29GT320WG_Renesas.pdf) that lists specifications for multiple related part numbers.

General Description

The MITSUBISHI Mobile FLASH M5M29GB/T320WG are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation)

Overview

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.

The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003.

These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp.

Key Features

  • Organization 2,097,152 word x 16bit 4,194,304 word x 8 bit Boot Block M5M29GB320WG M5M29GT320WG Bottom Boot Top Boot Supply voltage Access time VCC = 2.7 ~ 3.6V 80ns (Vcc=3.0~3.6V) 90ns (Vcc=2.7~3.6V) Power Dissipation 72 mW (Max. at 5MHz) Read (After Automatic Power saving) 0.33µW (typ. ) Program/Erase 126mW (Max. ) 0.33µW (typ. ) Standby Deep power down mode 0.33µW (typ. ) Auto program for Bank(I) and Bank(II) Program Time 4ms (typ. ) Program Unit (Byte Program) 1word/1byte (Pag.

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