Datasheet4U Logo Datasheet4U.com
Renesas logo

M5M29GT320VP-80 Datasheet

Manufacturer: Renesas
M5M29GT320VP-80 datasheet preview

Datasheet Details

Part number M5M29GT320VP-80
Datasheet M5M29GT320VP-80_Renesas.pdf
File Size 85.33 KB
Manufacturer Renesas
Description CMOS Block Erase Flash Memory
M5M29GT320VP-80 page 2 M5M29GT320VP-80 page 3

M5M29GT320VP-80 Overview

The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation).

M5M29GT320VP-80 Key Features

  • 2,097,152 word x 16bit
  • 4,194,304 word x 8 bit
  • Bottom Boot
  • Top Boot
  • VCC = 2.7 ~ 3.6V Access time 90ns (Vcc=2.7~3.6V) Power Dissipation
  • 72 mW (Max. at 5MHz) Read (After Automatic Power saving)
  • 0.33µW (typ.) Program/Erase
  • 126mW (Max.)
  • 0.33µW (typ.) Standby Deep power down mode
  • 0.33µW (typ.) Auto program for Bank(I) and Bank(II) Program Time
Renesas logo - Manufacturer

More Datasheets from Renesas

See all Renesas datasheets

Part Number Description
M5M29GT320WG CMOS Block Erase Flash Memory
M5M29GB320VP-80 CMOS Block Erase Flash Memory
M5M29GB320WG CMOS Block Erase Flash Memory
M5M5V5636UG-16 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

M5M29GT320VP-80 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts