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M5M29GB320WG - CMOS Block Erase Flash Memory

This page provides the datasheet information for the M5M29GB320WG, a member of the M5M29GT320WG CMOS Block Erase Flash Memory family.

Datasheet Summary

Description

The MITSUBISHI Mobile FLASH M5M29GB/T320WG are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature.

Features

  • Organization 2,097,152 word x 16bit 4,194,304 word x 8 bit Boot Block M5M29GB320WG M5M29GT320WG Bottom Boot Top Boot Supply voltage Access time VCC = 2.7 ~ 3.6V 80ns (Vcc=3.0~3.6V) 90ns (Vcc=2.7~3.6V) Power Dissipation 72 mW (Max. at 5MHz) Read (After Automatic Power saving) 0.33µW (typ. ) Program/Erase 126mW (Max. ) 0.33µW (typ. ) Standby Deep power down mode 0.33µW (typ. ) Auto program for Bank(I) and Bank(II) Program Time 4ms (typ. ) Program Unit (Byte Program) 1word/1byte (Pag.

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Datasheet Details

Part number M5M29GB320WG
Manufacturer Renesas
File Size 130.45 KB
Description CMOS Block Erase Flash Memory
Datasheet download datasheet M5M29GB320WG Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp.
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