Datasheet4U Logo Datasheet4U.com

M6MGB321S4TP - CMOS SRAM

Download the M6MGB321S4TP datasheet PDF. This datasheet also covers the M6MGT321S4TP variant, as both devices belong to the same cmos sram family and are provided as variant models within a single manufacturer datasheet.

Description

M6MGB/T321S4TP provides for Software Lock Release function.

Usually, all memory blocks are locked and can not be programmed or erased, when F-WP# is low.

Using Software Lock Release function, program or erase operation 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, can be executed.

Features

  • DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max. ) 4M-bit SRAM is a 524,288 bytes / 262,144 words SRAM 85ns (Max. ) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.6V The M6MGB/T321S4TP is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP. M6MGB/T321S4TP is suitable for the.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M6MGT321S4TP_Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M6MGB160S2BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP Mitsubishi
M6MGB160S4BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP Mitsubishi
M6MGB162S2BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP Mitsubishi
M6MGB162S4BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP Mitsubishi
M6MGB166S2BWG CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP Mitsubishi

Other Datasheets by Renesas

Part Number Description
M6MGB321S8TP CMOS SRAM
M6MGB32BS4WG CMOS SRAM
M6MGB32BS8WG CMOS SRAM
M6MGB331S4BKT CMOS SRAM
M6MGB331S8AKT CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Renesas LSIs M6MGB/T321S4TP 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description M6MGB/T321S4TP provides for Software Lock Release function. Usually, all memory blocks are locked and can not be programmed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, can be executed. 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Features DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max.
Published: |