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M6MGB331S8BKT - CMOS SRAM

Download the M6MGB331S8BKT datasheet PDF. This datasheet also covers the M6MGT331S8BKT variant, as both devices belong to the same cmos sram family and are provided as variant models within a single manufacturer datasheet.

Description

The M6MGB/T331S8BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP for lead free use.

Features

  • Access Time Flash SRAM Supply Voltage Ambient Temperature Package 70ns (Max. ) 85ns (Max. ) VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 52pin TSOP(Type-II), Lead pitch 0.4mm Outer-lead finishing:Sn-Cu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M6MGT331S8BKT_Renesas.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Renesas

Part Number Description
M6MGB331S8AKT CMOS SRAM
M6MGB331S4BKT CMOS SRAM
M6MGB33BS8AWG-P CMOS SRAM
M6MGB33BS8BWG CMOS SRAM
M6MGB33BS8BWG-P CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description The M6MGB/T331S8BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP for lead free use. 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, , single power supply and high performance nonvolatile memory fabricated by CMOS technology for the peripheral circuit and DINOR (Divided bit-line NOR IV) architecture for the memory cell.
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