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Renesas Electronics Components Datasheet

NE76000 Datasheet

N-CHANNEL GaAs MESFET

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DATA SHEET
GaAs MES FET
NE76000
C to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
FEATURES
• Low noise figure
NF = 1.6 dB TYP. at f = 12 GHz
• High associated gain
Ga = 9.0 dB TYP. at f = 12 GHz
• Gate length: Lg = 0.3 Pm
• Gate width: Wg = 280 Pm
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
t CHIP DIMENSIONS (Unit: Pm)
uc 450
57
Prod DRAIN
DRAIN
Drain to Source Voltage
VDS
5.0
Gate to Source Voltage
VGS
ð3.0
Gate to Drain Voltage
VGD
ð5.0
d Drain Current
ID
IDSS
e Total Power Dissipation
Ptot
500*1
Channel Temperature
Tch
175
u Storage Temperature
Tstg ð65 to +175
Thermal Resistance
Rth(c-a)
190
in *1 : TA = 100 qC
Ptot for chip mounted on a copper heat sink.
V
V
V
mA
mW
qC
qC
qC/W
t ELECTRICAL CHARACTERISTICS (TA = 25 qC)
SOURCE
GATE
49 48
GATE
SOURCE
46 52
225
Thickness = 140 µm
: BONDING AREA
n CHARACTERISTIC
o Gate to Source Leak Current
c Saturated Drain Current
Gate to Source Cutoff Voltage
is Transconductance
DNoise Figure
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
MIN.
15
ð0.5
30
TYP.
30
ð0.8
40
1.6
MAX.
10
50
ð3.0
70
1.8
UNIT
PA
mA
V
mS
dB
TEST CONDITIONS
VGS = ð4 V
VDS = 3 V, VGS = 0 V
VDS = 3 V, ID = 100 PA
VDS = 3 V, ID = 10 mA
VDS = 3 V, ID = 10 mA
Associated Gain
Ga
8.0
9.0
dB f = 12 GHz
Document No. P12369EJ2V0DS00 (2nd edition)
(Previous No. TC-2289)
Date Published February 1997 N
Printed in Japan
©
1990


Renesas Electronics Components Datasheet

NE76000 Datasheet

N-CHANNEL GaAs MESFET

No Preview Available !

NE76000
TYPICAL CHARACTERISTICS (TA = 25 qC)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
500
40
400
300
200
100
0
50
40
30
20
10
0
–2.0
VGS = 0 V
uct 50
100
150
200
d TA - Ambient Temperature - ˚C
o DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
r VDS = 3 V
tinued P –1.0
0
Discon VGS - Gate to Source Voltage - V
30
–0.2 V
20
–0.4 V
10
–0.6 V
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
2.5
15
VDS = 3 V
f = 12 HGz
2.0
10
Ga
1.5
0
0
NF
5
5
10
15
20
25
ID - Drain Current - mA
2



Part Number NE76000
Description N-CHANNEL GaAs MESFET
Maker Renesas
Total Page 3 Pages
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NE76000 Datasheet PDF





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