NE76000
Description
The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.
Key Features
- LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1 NE76000
