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NE76000L Datasheet

Manufacturer: NEC (now Renesas Electronics)
NE76000L datasheet preview

Datasheet Details

Part number NE76000L
Datasheet NE76000L_NEC.pdf
File Size 52.25 KB
Manufacturer NEC (now Renesas Electronics)
Description LOW NOISE L TO Ku BAND GaAs MESFET
NE76000L page 2 NE76000L page 3

NE76000L Overview

The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.

NE76000L Key Features

  • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz
  • LG = 0.3 µm, WG = 280 µm
  • ION IMPLANTATION
  • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz

NE76000 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Renesas Logo NE76000 N-CHANNEL GaAs MESFET Renesas
NEC (now Renesas Electronics) logo - Manufacturer

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