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NE76000L - LOW NOISE L TO Ku BAND GaAs MESFET

Description

The NE76000 provides a low noise figure and high associated gain through K-Band.

The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.

These devices feature a recessed 0.3 micron gate and triple epitaxial technology.

Features

  • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1 NE76000 NOISE FIGURE &.

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Datasheet Details

Part number NE76000L
Manufacturer NEC
File Size 52.25 KB
Description LOW NOISE L TO Ku BAND GaAs MESFET
Datasheet download datasheet NE76000L Datasheet
Additional preview pages of the NE76000L datasheet.

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Full PDF Text Transcription

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LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1 NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 10 20 • LG = 0.3 µm, WG = 280 µm • ION IMPLANTATION DESCRIPTION The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. The surface of the device, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch protection as well as surface stability.
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