NE76000L Overview
The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.
NE76000L Key Features
- LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz
- LG = 0.3 µm, WG = 280 µm
- ION IMPLANTATION
- HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz
