NP100N055PUK transistor equivalent, mos field effect transistor.
* Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)
* Designed for automotive applicat.
Features
* Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 4900.
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