NP100P06PDG
Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )
- Low input capacitance : Ciss = 15000 pF Typ.
- Designed for automotive application and AEC-Q101 qualified.
- Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 12 3
- Drain
- Source
- Drain(Fin)
