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NP100P06PDG - P-channel Power MOSFET

Renesas

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Datasheet Details

Part number: NP100P06PDG
Manufacturer: Renesas ↗
File Size: 1.33 MB
Datasheet: NP100P06PDG-Renesas.pdf
Description: P-channel Power MOSFET

NP100P06PDG Product details

Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications..

Features

Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ).
Low input capacitance : Ciss = 15000 pF Typ.
Designed for automotive application and AEC-Q101 qualified.
Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 12 3 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-25ZP (TO-263) Absolute Maximum Ratings Gate Source Equivalent circuit Item Symbol Ratings Dra.

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P-channel Power MOSFET Renesas

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