NP36P06KDG Overview
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
NP36P06KDG Key Features
- Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V
- Low input capacitance : Ciss = 3100 pF Typ
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
