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NP36P06SLG - N-Channel Power MOSFET

General Description

The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 18 A) RDS(on)2 = 40 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 18 A).
  • Low input capacitance Ciss = 3200 pF TYP.
  • Built-in gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ciss = 3200 pF TYP.