NEC NP36P06SLG
The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | NP36P06SLG |
|---|---|
| Datasheet | NP36P06SLG Download |
| Manufacturer |  NEC |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)● Low input capacitance Ciss = 3200 pF TYP.
● Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP36P06SLG TO-252 (MP-3ZK) (TO-252)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS −60 m20 m36 m108 56 1.2 175 −55 to +175 23.4 54.8 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.68 125 °C/W °C/W The information in this document is subject to change without notice.
