The NP36P06SLG is a N-Channel Power MOSFET.
| Package | TO-252 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.4 mm |
| Length | 6 mm |
| Width | 6 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | NP36P06SLG Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Super low on-state resistance
RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(o.
* Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = *10 V, ID = *18 A) RDS(on)2 = 40 mΩ MAX. (VGS = *4.5 V, ID = *18 A) * Low input capacitance Ciss = 3200 pF TYP. * Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP36P06SLG TO-252 (MP-3ZK) (TO-252) ABSOLUTE M. |
| Part Number | NP36P06SLG Datasheet |
|---|---|
| Description | P-channel Power MOSFET |
| Manufacturer | Renesas |
| Overview |
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(.
* Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max. ( VGS = -4.5 V, ID = -18 A ) * Low input capacitance : Ciss = 3200 pF Typ. * Built-in gate protection diode * Designed for automotive application and AEC-Q101 qualified. * Pb-free (This product do. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 1973 | 1+ : 2.55 USD 10+ : 1.65 USD 25+ : 1.47 USD 50+ : 1.3 USD |
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| Renesas | 6601 | 1+ : 2.48 USD 10+ : 1.596 USD 100+ : 1.0912 USD 500+ : 0.87504 USD |
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| Chip One Stop | 2490 | 5+ : 2.47 USD 10+ : 1.59 USD 50+ : 1.44 USD 100+ : 1.08 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| NP36P06KDG | NEC | N-Channel Power MOSFET |
| NP36P06KDG | Renesas | P-channel Power MOSFET |