NP36P06SLG Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
NP36P06SLG Key Features
- Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max. ( VGS = -4.5 V, ID
- Low input capacitance : Ciss = 3200 pF Typ
- Built-in gate protection diode
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)