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NP36P06KDG - N-Channel Power MOSFET

General Description

The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 18 A).
  • Low input capacitance Ciss = 3100 pF TYP. (TO-263).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP36P06KDG-E1-AY NP36P06KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ciss = 3100 pF TYP.