NP36P06KDG Description
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP36P06KDG-E1-AY NP36P06KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.).
NP36P06KDG Key Features
- Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = -4.5 V, I
- Low input capacitance Ciss = 3100 pF TYP. (TO-263)