* Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max. ( VGS = -4.5 V, ID = -18 A )
* Low input capacitance : Ciss = 3200 pF Typ.
* Built-in gate protection diode
* Designed for automotive application and AEC-Q101 qualified.
* Pb-f
NP36P06SLG Datasheet (1.50 MB)
NP36P06SLG
1.50 MB
P-channel power mosfet.
NP36P06SLG -60V -36A P-channel Power MOS FET Application : Automotive Datasheet R07DS1510EJ0100 Rev.1.00 May. 27, 2022 Descripti.
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