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NP36P06SLG - P-channel Power MOSFET

General Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max. ( VGS = -4.5 V, ID = -18 A ).
  • Low input capacitance : Ciss = 3200 pF Typ.
  • Built-in gate protection diode.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP36P06SLG -60V – -36A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1510EJ0100 Rev.1.00 May. 27, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max. ( VGS = -4.5 V, ID = -18 A )  Low input capacitance : Ciss = 3200 pF Typ.  Built-in gate protection diode  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 1 2 3 1. Gate 2. Drain 3. Source 4.