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NP60N06VDK - N-Channel MOSFET

Description

NP60N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A).
  • Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP60N06VDK 60 V – 60 A – N-channel Power MOS FET Application: Automotive Data Sheet R07DS1340EJ0200 Rev.2.00 May 24, 2018 Description NP60N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Outline TO-252(MP-3ZP) Equivalent circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No.
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