NP60N06VDK
Description
NP60N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)
- Low Ciss: Ciss = 2400 p F TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
Outline
TO-252(MP-3ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
Lead Plating
Packing
NP60N06VDK-E1-AY
- 1 NP60N06VDK-E2-AY
- 1
Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type) Taping (E2 type)
Note:
- 1. Pb-free (This product does not contain Pb in the external electrode)
Package TO-252(MP-3ZP)
R07DS1340EJ0200 Rev.2.00 May 24, 2018
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Absolute Maximum Ratings (TA =...
