* Channel Temperature 175 degree rated
* Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A)
* Low Ciss : Ciss = 2360 pF (TYP.)
* Built-in Gate protection diode ORDERING INFORMATION PART NUMBER
NP80N06ELD Datasheet (83.70 KB)
NP80N06ELD
83.70 KB
N-channel power mos fet.
PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIP.
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