* Logic level
* Built-in gate protection diode
* Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4..

ORDERING INFORMATION PART NUMBER NP82N04MLG-S18-AY Note NP82N04NLG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING T.

The NP82N04MLG and NP82N04NLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MLG-S18-AY Note NP82N04NLG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p.

NP82N04MDG

NP82N04NDG

NP82N04NLG

NP82N04PDG

NP82N04PUG

NP82N03PUG

NP82N055CHE

NP82N055DHE

NP82N055EHE

NP82N055KHE

NP82N055MUG

NP82N055NUG

NP82N06PDG