NP82N04PDG
Overview
- Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
- Low Ciss Ciss = 6000 pF TYP.
- Part: NP82N04PDG
- Description: N-CHANNEL POWER MOS FET
- Manufacturer: Renesas
- Size: 217.06 KB
Datasheets by Manufacturer
- NP82N055DHE — NEC — MOS FIELD EFFECT TRANSISTOR
- NP82N055EHE — NEC — MOS FIELD EFFECT TRANSISTOR
- NP82N055KHE — NEC — MOS FIELD EFFECT TRANSISTOR
- NP82N055MUG — NEC — N-CHANNEL POWER MOS FET
- NP82N055NUG — NEC — N-CHANNEL POWER MOS FET